? 1/5 main product characteristics i f(av) up to 2 x 120 a v rrm 200 v t j 150c v f (typ) 0.75 v t rr (typ) 41 ns STTH20002TV turbo 2 ultrafast high voltage rectifier absolute ratings (limiting values, per diode) symbol parameter value unit v rrm repetitive peak reverse voltage 200 v i f(rms) rms forward voltage 170 a i f(av) average forward current = 0.5 tc = 95c per diode 100 a tc = 80c per diode 120 i fsm surge non repetitive forward current tp = 10ms sinusoidal 1000 a t stg storage temperature range -55 to + 150 c t j maximum operating junction temperature 150 c k1 k2 a2 a1 isotop STTH20002TV1 a1 k1 a2 k2 july 2004 rev. 2 features and benefits suited for smps very low forward losses low recovery time high surge current capability insulated: insulating voltage=2500v rms capacitance = 55pf description dual rectifier suited for welding equipment, high power industrial application. packaged in isotop, this device is intended for use in the secondary rectification of the applications. order codes part number marking STTH20002TV1 STTH20002TV1
STTH20002TV 2/5 ? thermal resistance static electrical characteristics (per diode) pulse test: * tp = 5 ms, < 2% ** tp = 380 s, < 2% to evaluate the conduction losses use the following equation: p = 0.65 x i f(av) + 0.002 i f 2 (rms) dynamic characteristics (per diode) symbol parameter maximum unit r th(j-c) junction to case per diode 0.52 c/w total 0.31 r th(c) coupling 0.1 c/w when the diodes 1 and 2 are used simultaneously: ? tj(diode 1) = p(diode 1) x r th(j-c) (per diode) + p(diode 2) x r th(c) symbol parameter test conditions min. typ max. unit i r * reverse leakage current t j = 25c v r = v rrm 100 a t j = 125c 80 800 v f ** forward voltage drop t j = 25c i f = 100a 1.05 v i f = 200a 1.20 t j = 150c i f = 100a 0.75 0.85 i f = 200a 1.05 symbol parameter test conditions min. typ max. unit t rr reverse recovery time t j = 25c i f = 1a di f /dt = 200 a/s v r =30v 41 50 ns i rm reverse recovery current t j = 125c i f = 100a v r = 160v di f /dt = 200 a/s 11.5 15 a t fr forward recovery time t j = 25c i f = 100a di f /dt = 200 a/s v fr = 1.1 x v fmax 800 ns v fp forward recovery voltage t j = 25c i f = 100a di f /dt = 200 a/s 2.5 v
STTH20002TV 3/5 ? fig. 1: peak current versus duty cycle (per diode). fig. 2-1: forward voltage drop versus forward current (typical values, per diode). fig. 2-2: forward voltage drop versus forward current (maximum values, per diode). fig. 3: relative variation of thermal impedance junction to case versus pulse duration. fig. 4: junction capacitance versus reverse voltage applied (typical values, per diode). fig. 5: reverse recovery charges versus di f /dt (typical values, per diode). 0 100 200 300 400 500 600 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 t =tp/t tp p = 160w p = 120w p = 80w i (a) m 0 20 40 60 80 100 120 140 160 180 200 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 i (a) fm t =150c j t =25c j v (v) fm 0 20 40 60 80 100 120 140 160 180 200 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 i (a) fm t =150c j t =25c j v (v) fm 0.1 1.0 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 z/r th(j-c) th(j-c) t (s) p single pulse 100 1000 10000 1 10 100 1000 c(pf) v (v) r f=1mhz v =30mv t =25c osc rms j 0 100 200 300 400 500 600 700 800 900 1000 10 100 1000 q (nc) rr i =100a f v =160v r di /dt(a/s) f t =25c j t =125c j
STTH20002TV 4/5 ? fig. 6: reserve recovery time versus di f /dt (typical values, per diode). fig. 7: peak reverse recovery current versus di f /dt (typical values, per diode). fig. 8: dynamic parameters versus junction temperature. 0 20 40 60 80 100 120 10 100 1000 t (ns) rr di /dt(a/s) f t =25c j t =125c j i =100a f v =160v r 0 5 10 15 20 25 10 100 1000 i (a) rm di /dt(a/s) f t =25c j t =125c j i =100a f v =160v r 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 150 q;i ] / rr rm j rr rm j [t q ; i [t =125c] t (c) j i rm q rr i =100a f v =160v r
STTH20002TV 5/5 ? package mechanical data isotop information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the cons equences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states www.st.com ordering information epoxy meets ul94, v0 cooling method: by conduction (c) ordering type marking package weight base qty delivery mode STTH20002TV1 STTH20002TV1 isotop 27 g (without screws) 10 (with screws) tube ref. dimensions millimeters inches min. max. min. max. a 11.80 12.20 0.465 0.480 a1 8.90 9.10 0.350 0.358 b 7.8 8.20 0.307 0.323 c 0.75 0.85 0.030 0.033 c2 1.95 2.05 0.077 0.081 d 37.80 38.20 1.488 1.504 d1 31.50 31.70 1.240 1.248 e 25.15 25.50 0.990 1.004 e1 23.85 24.15 0.939 0.951 e2 24.80 typ. 0.976 typ. g 14.90 15.10 0.587 0.594 g1 12.60 12.80 0.496 0.504 g2 3.50 4.30 0.138 0.169 f 4.10 4.30 0.161 0.169 f1 4.60 5.00 0.181 0.197 p 4.00 4.30 0.157 0.69 p1 4.00 4.40 0.157 0.173 s 30.10 30.30 1.185 1.193 revision history table 1: revision history date revision description of changes 26-may-2004 1 first issue 13-jul-2004 2 figure 6 legend corrected: ?forward? changed to ?reverse?
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